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SI4463BDY-T1-GE3 Vishay Semiconductors
auf Bestellung 4797 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.52 EUR |
10+ | 2.09 EUR |
100+ | 1.67 EUR |
500+ | 1.41 EUR |
1000+ | 1.21 EUR |
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Technische Details SI4463BDY-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 20V 9.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V.
Weitere Produktangebote SI4463BDY-T1-GE3 nach Preis ab 1.2 EUR bis 2.53 EUR
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SI4463BDY-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V |
auf Bestellung 4957 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4463BDY-T1-GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SI4463BDY-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -13.7A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -13.7A Pulsed drain current: -50A Power dissipation: 3W Case: SO8 Gate-source voltage: ±12V On-state resistance: 20mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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![]() |
SI4463BDY-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V |
Produkt ist nicht verfügbar |
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SI4463BDY-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -13.7A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -13.7A Pulsed drain current: -50A Power dissipation: 3W Case: SO8 Gate-source voltage: ±12V On-state resistance: 20mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |