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SI4431BDY-T1-GE3

SI4431BDY-T1-GE3 Vishay Siliconix

si4431bd.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.71 EUR
5000+ 0.68 EUR
Mindestbestellmenge: 2500
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Technische Details SI4431BDY-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 30V 5.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V.

Weitere Produktangebote SI4431BDY-T1-GE3 nach Preis ab 0.68 EUR bis 1.75 EUR

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SI4431BDY-T1-GE3 SI4431BDY-T1-GE3 Hersteller : Vishay Siliconix si4431bd.pdf Description: MOSFET P-CH 30V 5.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
auf Bestellung 6593 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.72 EUR
13+ 1.41 EUR
100+ 1.1 EUR
500+ 0.93 EUR
1000+ 0.76 EUR
Mindestbestellmenge: 11
SI4431BDY-T1-GE3 SI4431BDY-T1-GE3 Hersteller : Vishay / Siliconix si4431bd.pdf MOSFETs 30V 7.5A 2.5W 30mohm @ 10V
auf Bestellung 6891 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.75 EUR
10+ 1.43 EUR
100+ 1.11 EUR
500+ 0.94 EUR
1000+ 0.77 EUR
2500+ 0.71 EUR
5000+ 0.68 EUR
Mindestbestellmenge: 2
SI4431BDY-T1-GE3 Hersteller : Vishay si4431bd.pdf Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R
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