SI3475DV-T1-E3
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Technische Details SI3475DV-T1-E3
Description: MOSFET P-CH 200V 950MA 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 950mA (Tc), Rds On (Max) @ Id, Vgs: 1.61Ohm @ 900mA, 10V, Power Dissipation (Max): 2W (Ta), 3.2W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V.
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SI3475DV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 200V 950MA 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 950mA (Tc) Rds On (Max) @ Id, Vgs: 1.61Ohm @ 900mA, 10V Power Dissipation (Max): 2W (Ta), 3.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 6-TSOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V |
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