Produkte > VISHAY SILICONIX > SI3460DDV-T1-BE3
SI3460DDV-T1-BE3

SI3460DDV-T1-BE3 Vishay Siliconix

si3460ddv.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.15 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SI3460DDV-T1-BE3 Vishay Siliconix

Description: N-CHANNEL 20-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V, Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V.

Weitere Produktangebote SI3460DDV-T1-BE3 nach Preis ab 0.17 EUR bis 0.69 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SI3460DDV-T1-BE3 SI3460DDV-T1-BE3 Hersteller : Vishay / Siliconix si3460ddv.pdf MOSFETs N-CHANNEL 20-V (D-S)
auf Bestellung 83505 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.65 EUR
10+ 0.49 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 5
SI3460DDV-T1-BE3 SI3460DDV-T1-BE3 Hersteller : Vishay Siliconix si3460ddv.pdf Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
auf Bestellung 8979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
36+ 0.49 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 26
SI3460DDV-T1-BE3 SI3460DDV-T1-BE3 Hersteller : Vishay si3460ddv.pdf N-Channel MOSFET
Produkt ist nicht verfügbar
SI3460DDV-T1-BE3 Hersteller : Vishay nods.pdf N-Channel MOSFET
Produkt ist nicht verfügbar