auf Bestellung 35984 Stücke:
Lieferzeit 746-750 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.74 EUR |
| 10+ | 0.6 EUR |
| 100+ | 0.41 EUR |
| 1000+ | 0.23 EUR |
| 3000+ | 0.22 EUR |
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Technische Details SI3440ADV-T1-BE3 Vishay / Siliconix
Description: N-CHANNEL 150-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 2.2A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 1.5A, 10V, Power Dissipation (Max): 2W (Ta), 3.6W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 75 V.
Weitere Produktangebote SI3440ADV-T1-BE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SI3440ADV-T1-BE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 150V 2.2A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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| SI3440ADV-T1-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 2.2A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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SI3440ADV-T1-BE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 150-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 2.2A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 1.5A, 10V Power Dissipation (Max): 2W (Ta), 3.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 75 V |
Produkt ist nicht verfügbar |
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SI3440ADV-T1-BE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 150-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 2.2A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 1.5A, 10V Power Dissipation (Max): 2W (Ta), 3.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 75 V |
Produkt ist nicht verfügbar |