auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3407DV-T1-GE3 Vishay
Description: MOSFET P-CH 20V 8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V, Power Dissipation (Max): 4.2W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V.
Weitere Produktangebote SI3407DV-T1-GE3 nach Preis ab 0.24 EUR bis 1.04 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SI3407DV-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 20V 8A 6-Pin TSOP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
Si3407DV-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFET -20V Vds 12V Vgs TSOP-6 |
auf Bestellung 62256 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
Si3407DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V Power Dissipation (Max): 4.2W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V |
auf Bestellung 6265 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
Si3407DV-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.7W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Power dissipation: 2.7W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 24mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2942 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
Si3407DV-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.7W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Power dissipation: 2.7W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 24mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2942 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
SI3407DV-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 20V 8A 6-Pin TSOP T/R |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
SI3407DV-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 20V 8A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
Si3407DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V Power Dissipation (Max): 4.2W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V |
Produkt ist nicht verfügbar |