auf Bestellung 17777 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.8 EUR |
| 10+ | 0.68 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.29 EUR |
| 3000+ | 0.26 EUR |
| 9000+ | 0.24 EUR |
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Technische Details SI2399DS-T1-BE3 Vishay / Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 6A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 5.1A, 10V, Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 835 pF @ 10 V.
Weitere Produktangebote SI2399DS-T1-BE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SI2399DS-T1-BE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 20V 6A 3-Pin SOT-23 T/R |
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SI2399DS-T1-BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 20-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 6A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.1A, 10V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 835 pF @ 10 V |
Produkt ist nicht verfügbar |
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SI2399DS-T1-BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 20-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 6A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.1A, 10V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 835 pF @ 10 V |
Produkt ist nicht verfügbar |