SI2392DS-T1-GE3 VISHAY
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Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 3.1A; Idm: 8A
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 3.1A
On-state resistance: 189mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 10.4nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 8A
Anzahl je Verpackung: 3000 Stücke
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Technische Details SI2392DS-T1-GE3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 3.1A; Idm: 8A, Mounting: SMD, Case: SOT23, Kind of package: reel; tape, Drain-source voltage: 100V, Drain current: 3.1A, On-state resistance: 189mΩ, Type of transistor: N-MOSFET, Power dissipation: 2.5W, Polarisation: unipolar, Gate charge: 10.4nC, Technology: TrenchFET®, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 8A, Anzahl je Verpackung: 3000 Stücke.
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SI2392DS-T1-GE3 | Hersteller : Vishay Siliconix |
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SI2392DS-T1-GE3 | Hersteller : Vishay Siliconix |
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Produkt ist nicht verfügbar |
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SI2392DS-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 3.1A; Idm: 8A Mounting: SMD Case: SOT23 Kind of package: reel; tape Drain-source voltage: 100V Drain current: 3.1A On-state resistance: 189mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Gate charge: 10.4nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 8A |
Produkt ist nicht verfügbar |