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SI2342DS-T1-BE3

SI2342DS-T1-BE3 Vishay Siliconix

si2342ds.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 8-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 4 V
auf Bestellung 2486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.79 EUR
27+ 0.68 EUR
100+ 0.47 EUR
500+ 0.37 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 23
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Technische Details SI2342DS-T1-BE3 Vishay Siliconix

Description: N-CHANNEL 8-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 7.2A, 4.5V, Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 4 V.

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SI2342DS-T1-BE3 SI2342DS-T1-BE3 Hersteller : Vishay / Siliconix si2342ds.pdf MOSFET N-CHANNEL 8-V (D-S)
auf Bestellung 47916 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.8 EUR
10+ 0.68 EUR
100+ 0.51 EUR
500+ 0.4 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 4
SI2342DS-T1-BE3 SI2342DS-T1-BE3 Hersteller : Vishay Siliconix si2342ds.pdf Description: N-CHANNEL 8-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 4 V
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