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SI2337DS-T1-BE3

SI2337DS-T1-BE3 Vishay Siliconix

si2337ds.pdf Hersteller: Vishay Siliconix
Description: P-CHANNEL 80-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.64 EUR
6000+ 0.61 EUR
Mindestbestellmenge: 3000
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Technische Details SI2337DS-T1-BE3 Vishay Siliconix

Description: P-CHANNEL 80-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 2.2A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V, Power Dissipation (Max): 760mW (Ta), 2.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V.

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SI2337DS-T1-BE3 SI2337DS-T1-BE3 Hersteller : Vishay Siliconix si2337ds.pdf Description: P-CHANNEL 80-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V
auf Bestellung 6790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.57 EUR
14+ 1.27 EUR
100+ 0.99 EUR
500+ 0.84 EUR
1000+ 0.68 EUR
Mindestbestellmenge: 12
SI2337DS-T1-BE3 SI2337DS-T1-BE3 Hersteller : Vishay / Siliconix si2337ds.pdf MOSFETs P-CHANNEL 80-V (D-S)
auf Bestellung 70926 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.59 EUR
10+ 1.3 EUR
100+ 1.01 EUR
500+ 0.85 EUR
1000+ 0.69 EUR
3000+ 0.65 EUR
6000+ 0.62 EUR
Mindestbestellmenge: 2
SI2337DS-T1-BE3 SI2337DS-T1-BE3 Hersteller : Vishay si2337ds.pdf Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R
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