SI2328DS-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.15A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Description: MOSFET N-CH 100V 1.15A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.51 EUR |
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Technische Details SI2328DS-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 100V 1.15A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V, Power Dissipation (Max): 730mW (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V.
Weitere Produktangebote SI2328DS-T1-E3 nach Preis ab 0.52 EUR bis 1.62 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SI2328DS-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2328DS-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2328DS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 1.15A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V |
auf Bestellung 7036 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2328DS-T1-E3 | Hersteller : Vishay Semiconductors | MOSFET 100V Vds 20V Vgs SOT-23 |
auf Bestellung 26348 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2328DS-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R |
auf Bestellung 2942 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2328DS-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R |
auf Bestellung 153 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2328DS-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2328DS-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2328DS-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2328DS-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 1.5A; Idm: 6A Kind of package: reel; tape Drain-source voltage: 100V Drain current: 1.5A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Gate charge: 5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 6A Mounting: SMD Case: SOT23 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI2328DS-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 1.5A; Idm: 6A Kind of package: reel; tape Drain-source voltage: 100V Drain current: 1.5A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Gate charge: 5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 6A Mounting: SMD Case: SOT23 |
Produkt ist nicht verfügbar |