SI2325DS-T1-BE3 Vishay / Siliconix
auf Bestellung 53447 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.59 EUR |
10+ | 1.3 EUR |
100+ | 1.01 EUR |
500+ | 0.85 EUR |
1000+ | 0.69 EUR |
3000+ | 0.63 EUR |
6000+ | 0.62 EUR |
Produktrezensionen
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Technische Details SI2325DS-T1-BE3 Vishay / Siliconix
Description: P-CHANNEL 150-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 530mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V.
Weitere Produktangebote SI2325DS-T1-BE3 nach Preis ab 0.7 EUR bis 1.6 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SI2325DS-T1-BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 150-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 530mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
auf Bestellung 1980 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2325DS-T1-BE3 | Hersteller : Vishay | Trans MOSFET P-CH 150V 0.53A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2325DS-T1-BE3 | Hersteller : Vishay | Trans MOSFET P-CH 150V 0.53A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2325DS-T1-BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 150-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 530mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
Produkt ist nicht verfügbar |