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SI2310K-TP

SI2310K-TP Micro Commercial Co

SI2310K(SOT-23).pdf Hersteller: Micro Commercial Co
Description: SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 500mA, 10V
Power Dissipation (Max): 1.3W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
33+ 0.55 EUR
37+ 0.48 EUR
100+ 0.31 EUR
250+ 0.26 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
2500+ 0.14 EUR
5000+ 0.12 EUR
Mindestbestellmenge: 24
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Technische Details SI2310K-TP Micro Commercial Co

Description: SMALL SIGNAL MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Power Dissipation (Max): 1.3W (Tj), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V, Rds On (Max) @ Id, Vgs: 104mOhm @ 500mA, 10V.

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SI2310K-TP Hersteller : Micro Commercial Components SI2310K(SOT-23).pdf SI2310K-TP
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SI2310K-TP Hersteller : Micro Commercial Components SI2310K(SOT-23).pdf SI2310K-TP
Produkt ist nicht verfügbar
SI2310K-TP SI2310K-TP Hersteller : Micro Commercial Co SI2310K(SOT-23).pdf Description: SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Power Dissipation (Max): 1.3W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V
Rds On (Max) @ Id, Vgs: 104mOhm @ 500mA, 10V
Produkt ist nicht verfügbar
SI2310K-TP SI2310K-TP Hersteller : Micro Commercial Components (MCC) SI2310K_SOT_23_-3423052.pdf MOSFETs N-CHANNEL MOSFET,SOT-23
Produkt ist nicht verfügbar