![SI2308CDS-T1-GE3 SI2308CDS-T1-GE3](https://static6.arrow.com/aropdfconversion/arrowimages/23a8528bfc07ab43998b946a9b887af1883bfdb8/62911-pt-medium.jpg)
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
564+ | 0.27 EUR |
616+ | 0.24 EUR |
721+ | 0.2 EUR |
1000+ | 0.18 EUR |
2000+ | 0.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2308CDS-T1-GE3 Vishay
Description: MOSFET N-CH 60V 2.6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Rds On (Max) @ Id, Vgs: 144mOhm @ 1.9A, 10V, Power Dissipation (Max): 1.6W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 30 V.
Weitere Produktangebote SI2308CDS-T1-GE3 nach Preis ab 0.17 EUR bis 0.62 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SI2308CDS-T1-GE3 | Hersteller : Vishay Semiconductors |
![]() |
auf Bestellung 158078 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
SI2308CDS-T1-GE3 Produktcode: 202447 |
![]() |
Produkt ist nicht verfügbar
|
|||||||||||||||
![]() |
SI2308CDS-T1-GE3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
SI2308CDS-T1-GE3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
SI2308CDS-T1-GE3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
SI2308CDS-T1-GE3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
SI2308CDS-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.6A Pulsed drain current: 6A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 144mΩ Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
SI2308CDS-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 144mOhm @ 1.9A, 10V Power Dissipation (Max): 1.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 30 V |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
SI2308CDS-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 144mOhm @ 1.9A, 10V Power Dissipation (Max): 1.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 30 V |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
SI2308CDS-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.6A Pulsed drain current: 6A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 144mΩ Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |