auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.23 EUR |
| 9000+ | 0.21 EUR |
Produktrezensionen
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Technische Details SI2308BDS-T1-E3 Vishay
Description: MOSFET N-CH 60V 2.3A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc), Rds On (Max) @ Id, Vgs: 156mOhm @ 1.9A, 10V, Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 30 V.
Weitere Produktangebote SI2308BDS-T1-E3 nach Preis ab 0.21 EUR bis 1.3 EUR
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SI2308BDS-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 2.3A 3-Pin SOT-23 T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2308BDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 2.3A 3-Pin SOT-23 T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2308BDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 2.3A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 156mOhm @ 1.9A, 10V Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 30 V |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2308BDS-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.3A; Idm: 8A; 1.06W; SOT23 Mounting: SMD Power dissipation: 1.06W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 8A Case: SOT23 Drain-source voltage: 60V Drain current: 2.3A On-state resistance: 156mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3990 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2308BDS-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.3A; Idm: 8A; 1.06W; SOT23 Mounting: SMD Power dissipation: 1.06W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 8A Case: SOT23 Drain-source voltage: 60V Drain current: 2.3A On-state resistance: 156mΩ Type of transistor: N-MOSFET |
auf Bestellung 3990 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2308BDS-T1-E3 | Hersteller : Vishay Semiconductors | MOSFETs 60V Vds 20V Vgs SOT-23 |
auf Bestellung 191484 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2308BDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 2.3A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 156mOhm @ 1.9A, 10V Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 30 V |
auf Bestellung 28403 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2308BDS-T1-E3 | Hersteller : VISHAY |
Description: VISHAY - SI2308BDS-T1-E3 - MOSFET, N CHANNEL, 60V, 2.3A, SOT-23-3 tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 2.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 1.66W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.13ohm directShipCharge: 25 SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 45289 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2308BDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 2.3A 3-Pin SOT-23 T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2308BDS-T1-E3 Produktcode: 168915 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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SI2308BDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 2.3A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2308BDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 2.3A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |