![SI2302A-TP SI2302A-TP](https://static6.arrow.com/aropdfconversion/arrowimages/5899c193c06698485227f79f33d30d848b1c25b3/sot-23.jpg)
SI2302A-TP Micro Commercial Components
auf Bestellung 864000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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12000+ | 0.09 EUR |
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Technische Details SI2302A-TP Micro Commercial Components
Description: MOSFET N-CH 20V 3A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tj), Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 1.25W, Vgs(th) (Max) @ Id: 1.2V @ 50µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 237 pF @ 10 V.
Weitere Produktangebote SI2302A-TP nach Preis ab 0.15 EUR bis 0.48 EUR
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SI2302A-TP | Hersteller : Micro Commercial Co |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tj) Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 1.2V @ 50µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 237 pF @ 10 V |
auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2302A-TP | Hersteller : MICRO COMMERCIAL COMPONENTS |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 3A; Idm: 10A; 1.25W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 3A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 7580 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2302A-TP | Hersteller : MICRO COMMERCIAL COMPONENTS |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 3A; Idm: 10A; 1.25W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 3A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 7580 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2302A-TP | Hersteller : Micro Commercial Components (MCC) |
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auf Bestellung 2901 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2302A-TP | Hersteller : Micro Commercial Co |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tj) Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 1.2V @ 50µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 237 pF @ 10 V |
auf Bestellung 51689 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2302A-TP | Hersteller : Micro Commercial Components |
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Produkt ist nicht verfügbar |
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SI2302A-TP | Hersteller : Micro Commercial Components |
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Produkt ist nicht verfügbar |
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SI2302A-TP | Hersteller : Micro Commercial Components |
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Produkt ist nicht verfügbar |