SI2301A-TP Micro Commercial Components
auf Bestellung 3000000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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12000+ | 0.12 EUR |
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Technische Details SI2301A-TP Micro Commercial Components
Description: MOSFET P-CH 20V 2.8A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tj), Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 1.25W, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 6 V.
Weitere Produktangebote SI2301A-TP nach Preis ab 0.13 EUR bis 0.77 EUR
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SI2301A-TP | Hersteller : Micro Commercial Components | Trans MOSFET P-CH 20V 2.8A 3-Pin SOT-23 T/R |
auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2301A-TP | Hersteller : Micro Commercial Components | Trans MOSFET P-CH 20V 2.8A 3-Pin SOT-23 T/R |
auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2301A-TP | Hersteller : MICRO COMMERCIAL COMPONENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -10A; 1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -10A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1635 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2301A-TP | Hersteller : MICRO COMMERCIAL COMPONENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -10A; 1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -10A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1635 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2301A-TP | Hersteller : Micro Commercial Components (MCC) | MOSFETs P-Ch -20Vds -2.8A 8Vgs -10A 1.0W |
auf Bestellung 17206 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2301A-TP | Hersteller : Micro Commercial Components | Trans MOSFET P-CH 20V 2.8A 3-Pin SOT-23 T/R |
auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2301A-TP | Hersteller : Micro Commercial Components | Trans MOSFET P-CH 20V 2.8A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2301A-TP | Hersteller : Micro Commercial Co |
Description: MOSFET P-CH 20V 2.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tj) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 6 V |
Produkt ist nicht verfügbar |
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SI2301A-TP | Hersteller : Micro Commercial Co |
Description: MOSFET P-CH 20V 2.8A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tj) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 6 V |
Produkt ist nicht verfügbar |