SI1965DH-T1-BE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2P-CH 12V 1.3A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 740mW (Ta), 1.25W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.27 EUR |
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Technische Details SI1965DH-T1-BE3 Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 740mW (Ta), 1.25W (Tc), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V, Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-70-6, Part Status: Active.
Weitere Produktangebote SI1965DH-T1-BE3 nach Preis ab 0.24 EUR bis 0.79 EUR
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SI1965DH-T1-BE3 | Hersteller : Vishay |
MOSFETs 12V P-CHANNEL DUAL |
auf Bestellung 146265 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1965DH-T1-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 12V 1.3A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 740mW (Ta), 1.25W (Tc) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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