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SI1499DH-T1-BE3

SI1499DH-T1-BE3 Vishay

si1499dh.pdf Hersteller: Vishay
MOSFET 1.5V P-CHANNEL (G-S)
auf Bestellung 60812 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.85 EUR
10+ 0.77 EUR
100+ 0.58 EUR
500+ 0.52 EUR
1000+ 0.45 EUR
3000+ 0.39 EUR
6000+ 0.38 EUR
Mindestbestellmenge: 4
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Technische Details SI1499DH-T1-BE3 Vishay

Description: MOSFET P-CH 8V 1.6A/1.6A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.6A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V, Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: SC-70-6, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V.

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SI1499DH-T1-BE3 SI1499DH-T1-BE3 Hersteller : Vishay Siliconix si1499dh.pdf Description: MOSFET P-CH 8V 1.6A/1.6A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V
auf Bestellung 2798 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.04 EUR
20+ 0.91 EUR
100+ 0.63 EUR
500+ 0.52 EUR
1000+ 0.45 EUR
Mindestbestellmenge: 17
SI1499DH-T1-BE3 SI1499DH-T1-BE3 Hersteller : Vishay Siliconix si1499dh.pdf Description: MOSFET P-CH 8V 1.6A/1.6A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V
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