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SI1417EDH-T1-E3 VISHAY


Hersteller: VISHAY

auf Bestellung 12200 Stücke:

Lieferzeit 21-28 Tag (e)
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Technische Details SI1417EDH-T1-E3 VISHAY

Description: MOSFET P-CH 12V 2.7A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 3.3A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Supplier Device Package: SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V.

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SI1417EDH-T1-E3 Hersteller : VISHAY 0718+P
auf Bestellung 2553 Stücke:
Lieferzeit 21-28 Tag (e)
SI1417EDH-T1-E3 Hersteller : VISHAY 09+
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SI1417EDH-T1-E3 SI1417EDH-T1-E3 Hersteller : Vishay Siliconix Description: MOSFET P-CH 12V 2.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Produkt ist nicht verfügbar
SI1417EDH-T1-E3 SI1417EDH-T1-E3 Hersteller : Vishay Siliconix Description: MOSFET P-CH 12V 2.7A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Produkt ist nicht verfügbar