![SI1330EDL-T1-E3 SI1330EDL-T1-E3](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2603/Pkg 5549.jpg)
SI1330EDL-T1-E3 Vishay Siliconix
![SI1330ED.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 60V 240MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.27 EUR |
6000+ | 0.26 EUR |
9000+ | 0.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI1330EDL-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SC70-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240mA (Ta), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V, Power Dissipation (Max): 280mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SC-70-3, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V.
Weitere Produktangebote SI1330EDL-T1-E3 nach Preis ab 0.25 EUR bis 0.81 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SI1330EDL-T1-E3 | Hersteller : Vishay Semiconductors |
![]() |
auf Bestellung 10471 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
SI1330EDL-T1-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-70-3 Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V |
auf Bestellung 36571 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
SI1330EDL-T1-E3 | Hersteller : Vishay |
![]() |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
![]() |
SI1330EDL-T1-E3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
SI1330EDL-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; 0.18W; SC70 Case: SC70 Mounting: SMD Gate charge: 0.4nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate Drain current: 0.19A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 2.5Ω Power dissipation: 0.18W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
SI1330EDL-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; 0.18W; SC70 Case: SC70 Mounting: SMD Gate charge: 0.4nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate Drain current: 0.19A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 2.5Ω Power dissipation: 0.18W |
Produkt ist nicht verfügbar |