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SI1303EDL-T1-E3

SI1303EDL-T1-E3 Vishay Siliconix


Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 670MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 670mA (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 1A, 4.5V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
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Technische Details SI1303EDL-T1-E3 Vishay Siliconix

Description: MOSFET P-CH 20V 670MA SC70-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 670mA (Ta), Rds On (Max) @ Id, Vgs: 430mOhm @ 1A, 4.5V, Power Dissipation (Max): 290mW (Ta), Vgs(th) (Max) @ Id: 600mV @ 250µA (Min), Supplier Device Package: SC-70-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V.

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SI1303EDL-T1-E3 SI1303EDL-T1-E3 Hersteller : Vishay / Siliconix 71094-1765699.pdf MOSFET 20V 0.72A
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