SH8KC6TB1 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET 2N-CH 60V 6.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.64 EUR |
| 5000+ | 0.61 EUR |
| 12500+ | 0.58 EUR |
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Technische Details SH8KC6TB1 Rohm Semiconductor
Description: ROHM - SH8KC6TB1 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 6.5 A, 6.5 A, 0.025 ohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 6.5A, Dauer-Drainstrom Id, p-Kanal: 6.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 60V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 6.5A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.025ohm, Verlustleistung, p-Kanal: 2W, Drain-Source-Spannung Vds, n-Kanal: 60V, euEccn: NLR, Bauform - Transistor: SOP, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.025ohm, productTraceability: No, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 2W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote SH8KC6TB1 nach Preis ab 0.61 EUR bis 1.55 EUR
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SH8KC6TB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.5A Pulsed drain current: 26A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: SMD Gate charge: 7.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 65 Stücke: Lieferzeit 7-14 Tag (e) |
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SH8KC6TB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.5A Pulsed drain current: 26A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: SMD Gate charge: 7.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8KC6TB1 | Hersteller : ROHM Semiconductor |
MOSFET 60V Dual Nch+Nch, SOP8, Power MOSFET |
auf Bestellung 34955 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8KC6TB1 | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 6.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
auf Bestellung 19963 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8KC6TB1 | Hersteller : ROHM |
Description: ROHM - SH8KC6TB1 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 6.5 A, 6.5 A, 0.025 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.025ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.025ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 3159 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8KC6TB1 | Hersteller : ROHM |
Description: ROHM - SH8KC6TB1 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 6.5 A, 6.5 A, 0.025 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 6.5A Dauer-Drainstrom Id, p-Kanal: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.025ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.025ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 3159 Stücke: Lieferzeit 14-21 Tag (e) |