SGW30N60HS Infineon Technologies
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Technische Details SGW30N60HS Infineon Technologies
Description: IGBT, 41A, 600V, N-CHANNEL, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A, Supplier Device Package: PG-TO247-3-1, IGBT Type: NPT, Td (on/off) @ 25°C: 20ns/250ns, Switching Energy: 1.15mJ, Test Condition: 400V, 30A, 11Ohm, 15V, Gate Charge: 141 nC, Part Status: Active, Current - Collector (Ic) (Max): 41 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 112 A, Power - Max: 250 W.
Weitere Produktangebote SGW30N60HS
Foto | Bezeichnung | Hersteller | Beschreibung |
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SGW30N60HS | Hersteller : Infineon Technologies |
Description: IGBT, 41A, 600V, N-CHANNEL Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A Supplier Device Package: PG-TO247-3-1 IGBT Type: NPT Td (on/off) @ 25°C: 20ns/250ns Switching Energy: 1.15mJ Test Condition: 400V, 30A, 11Ohm, 15V Gate Charge: 141 nC Part Status: Active Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 112 A Power - Max: 250 W |
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SGW30N60HS | Hersteller : Infineon Technologies | IGBT Transistors HIGH SPEED NPT TECH 600V 30A |
Produkt ist nicht verfügbar |