Technische Details SGH15N60RUFDTU
Description: IGBT 600V 24A 160W TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 60 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 15A, Supplier Device Package: TO-3PN, Td (on/off) @ 25°C: 17ns/44ns, Switching Energy: 320µJ (on), 356µJ (off), Test Condition: 300V, 15A, 13Ohm, 15V, Gate Charge: 42 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 24 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 160 W.
Weitere Produktangebote SGH15N60RUFDTU
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SGH15N60RUFDTU | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 600V 24A 160000mW 3-Pin(3+Tab) TO-3PN Rail |
Produkt ist nicht verfügbar |
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SGH15N60RUFDTU | Hersteller : onsemi |
Description: IGBT 600V 24A 160W TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 15A Supplier Device Package: TO-3PN Td (on/off) @ 25°C: 17ns/44ns Switching Energy: 320µJ (on), 356µJ (off) Test Condition: 300V, 15A, 13Ohm, 15V Gate Charge: 42 nC Part Status: Obsolete Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 160 W |
Produkt ist nicht verfügbar |