SGB10N60AATMA1 Infineon Technologies
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Technische Details SGB10N60AATMA1 Infineon Technologies
Description: IGBT 600V 20A 92W TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A, Supplier Device Package: PG-TO263-3-2, IGBT Type: NPT, Td (on/off) @ 25°C: 28ns/178ns, Switching Energy: 320µJ, Test Condition: 400V, 10A, 25Ohm, 15V, Gate Charge: 52 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 92 W.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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SGB10N60AATMA1 | Hersteller : Infineon Technologies |
Description: IGBT 600V 20A 92W TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Td (on/off) @ 25°C: 28ns/178ns Switching Energy: 320µJ Test Condition: 400V, 10A, 25Ohm, 15V Gate Charge: 52 nC Part Status: Obsolete Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 92 W |
Produkt ist nicht verfügbar |
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SGB10N60AATMA1 | Hersteller : Infineon Technologies | IGBT Transistors IGBT PRODUCTS |
Produkt ist nicht verfügbar |