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SGB07N120ATMA1

SGB07N120ATMA1 Infineon Technologies


sgb07n120_rev2_2.pdf Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 1200V 16.5A 125000mW 3-Pin(2+Tab) D2PAK T/R
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Technische Details SGB07N120ATMA1 Infineon Technologies

Description: IGBT 1200V 16.5A 125W TO263-3-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A, Supplier Device Package: PG-TO263-3-2, IGBT Type: NPT, Td (on/off) @ 25°C: 27ns/440ns, Switching Energy: 1mJ, Test Condition: 800V, 8A, 47Ohm, 15V, Gate Charge: 70 nC, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 16.5 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 27 A, Power - Max: 125 W.

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SGB07N120ATMA1 SGB07N120ATMA1 Hersteller : Infineon Technologies SGB07N120_Rev2_2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428344c3d97 Description: IGBT 1200V 16.5A 125W TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 27ns/440ns
Switching Energy: 1mJ
Test Condition: 800V, 8A, 47Ohm, 15V
Gate Charge: 70 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 16.5 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 125 W
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SGB07N120ATMA1 Hersteller : Infineon Technologies Infineon_SGB07N120_DS_v02_02_en-3167041.pdf IGBT Transistors INDUSTRY 14
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