Technische Details SFT1342-TL-E ON Semiconductor
Description: MOSFET P-CH 60V 12A DPAK/TP-FA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 62mOhm @ 6A, 10V, Power Dissipation (Max): 1W (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: DPAK/TP-FA, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 20 V.
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SFT1342-TL-E | Hersteller : ON Semiconductor |
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SFT1342-TL-E | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 6A, 10V Power Dissipation (Max): 1W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: DPAK/TP-FA Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 20 V |
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