Technische Details SE100PWGHM3/I Vishay
Description: DIODE GEN PURP 400V 10A SLIMDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2.6 µs, Technology: Standard, Capacitance @ Vr, F: 78pF @ 4V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: SlimDPAK, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10, Voltage Coupled to Current - Reverse Leakage @ Vr: 400, Current - Reverse Leakage @ Vr: 20 µA @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote SE100PWGHM3/I
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SE100PWGHM3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.6 µs Technology: Standard Capacitance @ Vr, F: 78pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10 Voltage Coupled to Current - Reverse Leakage @ Vr: 400 Current - Reverse Leakage @ Vr: 20 µA @ 400 V Qualification: AEC-Q101 |
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SE100PWGHM3/I | Hersteller : Vishay General Semiconductor |
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