Technische Details SDT04S60
Description: DIODE SIL CARB 600V 4A TO220-2-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 150pF @ 0V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: PG-TO220-2-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A, Current - Reverse Leakage @ Vr: 200 µA @ 600 V.
Weitere Produktangebote SDT04S60
Foto | Bezeichnung | Hersteller | Beschreibung |
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SDT04S60 Produktcode: 53317 |
Verschiedene Bauteile > Verschiedene Bauteile 2 |
Produkt ist nicht verfügbar
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SDT04S60 | Hersteller : Infineon Technologies |
Description: DIODE SIL CARB 600V 4A TO220-2-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 150pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
Produkt ist nicht verfügbar |
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SDT04S60 | Hersteller : Infineon Technologies | Schottky Diodes & Rectifiers SiC Diode 600V 4A |
Produkt ist nicht verfügbar |