SCT4062KWATL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 1200V, 24A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 4.39 EUR |
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Technische Details SCT4062KWATL Rohm Semiconductor
Description: 1200V, 24A, 7-PIN SMD, TRENCH-ST, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V, Vgs(th) (Max) @ Id: 4.8V @ 6.45mA, Supplier Device Package: TO-263-7LA, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V.
Weitere Produktangebote SCT4062KWATL nach Preis ab 8.78 EUR bis 18.46 EUR
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SCT4062KWATL | Hersteller : ROHM Semiconductor |
SiC MOSFETs TO263 1.2KV 24A N-CH SIC |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4062KWATL | Hersteller : Rohm Semiconductor |
Description: 1200V, 24A, 7-PIN SMD, TRENCH-ST Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V Vgs(th) (Max) @ Id: 4.8V @ 6.45mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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