SCT4045DW7TL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 750V, 31A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tj)
Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
Power Dissipation (Max): 93W
Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
Supplier Device Package: TO-263-7L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
auf Bestellung 629 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 19.1 EUR |
| 10+ | 16.81 EUR |
| 100+ | 14.54 EUR |
| 500+ | 13.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT4045DW7TL Rohm Semiconductor
Description: 750V, 31A, 7-PIN SMD, TRENCH-STR, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tj), Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V, Power Dissipation (Max): 93W, Vgs(th) (Max) @ Id: 4.8V @ 8.89mA, Supplier Device Package: TO-263-7L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V.
Weitere Produktangebote SCT4045DW7TL nach Preis ab 12.51 EUR bis 19.29 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SCT4045DW7TL | Hersteller : ROHM Semiconductor |
MOSFET 750V, SIC MOSFET |
auf Bestellung 2005 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
SCT4045DW7TL | Hersteller : ROHM |
Description: ROHM - SCT4045DW7TL - Siliziumkarbid-MOSFET, Eins, n-Kanal, 31 A, 750 V, 0.045 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 31A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.8V euEccn: NLR Verlustleistung: 93W Anzahl der Pins: 7Pin(s) productTraceability: No Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.045ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
SCT4045DW7TL | Hersteller : Rohm Semiconductor |
Description: 750V, 31A, 7-PIN SMD, TRENCH-STR Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tj) Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V Power Dissipation (Max): 93W Vgs(th) (Max) @ Id: 4.8V @ 8.89mA Supplier Device Package: TO-263-7L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V |
Produkt ist nicht verfügbar |