SCT3160KWAHRTL ROHM Semiconductor
Hersteller: ROHM Semiconductor
SiC MOSFETs 1200V, 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive : AEC-Q101 qualified automotive grade product. SCT3160KWAHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resist
SiC MOSFETs 1200V, 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive : AEC-Q101 qualified automotive grade product. SCT3160KWAHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resist
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 13.06 EUR |
| 10+ | 11.19 EUR |
| 25+ | 10.16 EUR |
| 100+ | 9.33 EUR |
| 250+ | 8.78 EUR |
| 500+ | 8.45 EUR |
| 1000+ | 7.15 EUR |
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Technische Details SCT3160KWAHRTL ROHM Semiconductor
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V, Vgs(th) (Max) @ Id: 5.6V @ 2.5mA, Supplier Device Package: TO-263-7LA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT3160KWAHRTL nach Preis ab 7.33 EUR bis 12.92 EUR
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| SCT3160KWAHRTL | Hersteller : Rohm Semiconductor |
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V Vgs(th) (Max) @ Id: 5.6V @ 2.5mA Supplier Device Package: TO-263-7LA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3160KWAHRTL | Hersteller : Rohm Semiconductor |
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V Vgs(th) (Max) @ Id: 5.6V @ 2.5mA Supplier Device Package: TO-263-7LA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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