SCT3080ARC15 ROHM Semiconductor
Hersteller: ROHM SemiconductorSiC MOSFETs 650V, 30A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
auf Bestellung 865 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 16.9 EUR |
| 10+ | 14.48 EUR |
| 25+ | 13.13 EUR |
| 100+ | 12.06 EUR |
| 250+ | 11.35 EUR |
| 450+ | 10.65 EUR |
| 900+ | 9.57 EUR |
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Technische Details SCT3080ARC15 ROHM Semiconductor
Description: 650V, 30A, 4-PIN THD, TRENCH-STR, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tj), Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V, Power Dissipation (Max): 134W, Vgs(th) (Max) @ Id: 5.6V @ 5mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V.
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SCT3080ARC15 | Hersteller : Rohm Semiconductor |
Description: 650V, 30A, 4-PIN THD, TRENCH-STR Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tj) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 134W Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V |
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