SCT3040KW7TL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: SICFET N-CH 1200V 56A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 5.6V @ 10mA
Supplier Device Package: TO-263-7
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 49.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT3040KW7TL Rohm Semiconductor
Description: SICFET N-CH 1200V 56A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V, Power Dissipation (Max): 267W, Vgs(th) (Max) @ Id: 5.6V @ 10mA, Supplier Device Package: TO-263-7, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V.
Weitere Produktangebote SCT3040KW7TL nach Preis ab 45.23 EUR bis 68.94 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SCT3040KW7TL | Hersteller : ROHM Semiconductor |
SiC MOSFETs 1200V 56A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET |
auf Bestellung 638 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SCT3040KW7TL | Hersteller : Rohm Semiconductor |
Description: SICFET N-CH 1200V 56A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Power Dissipation (Max): 267W Vgs(th) (Max) @ Id: 5.6V @ 10mA Supplier Device Package: TO-263-7 Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| SCT3040KW7TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 56A; Idm: 140A; 267W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 56A Pulsed drain current: 140A Power dissipation: 267W Case: TO263-7 Gate-source voltage: -4...22V On-state resistance: 52mΩ Mounting: SMD Gate charge: 107nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| SCT3040KW7TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 56A; Idm: 140A; 267W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 56A Pulsed drain current: 140A Power dissipation: 267W Case: TO263-7 Gate-source voltage: -4...22V On-state resistance: 52mΩ Mounting: SMD Gate charge: 107nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |