SCT3030ALGC11 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 70A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
Description: SICFET N-CH 650V 70A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
auf Bestellung 9088 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 48.65 EUR |
30+ | 40.33 EUR |
120+ | 37.81 EUR |
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Technische Details SCT3030ALGC11 Rohm Semiconductor
Description: SICFET N-CH 650V 70A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V, Power Dissipation (Max): 262W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 13.3mA, Supplier Device Package: TO-247N, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500.
Weitere Produktangebote SCT3030ALGC11 nach Preis ab 34.95 EUR bis 48.98 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SCT3030ALGC11 | Hersteller : ROHM Semiconductor | MOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS |
auf Bestellung 252 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3030ALGC11 | Hersteller : ROHM |
Description: ROHM - SCT3030ALGC11 - Leistungs-MOSFET, Siliziumkarbid, n-Kanal, 70A, 650V, 0.03 Ohm, 18V, 5.6V tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 262W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 426 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3030ALGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Mounting: THT Power dissipation: 262W Polarisation: unipolar Kind of package: tube Gate charge: 104nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 175A Case: TO247 Drain-source voltage: 650V Drain current: 70A On-state resistance: 39mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SCT3030ALGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Mounting: THT Power dissipation: 262W Polarisation: unipolar Kind of package: tube Gate charge: 104nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 175A Case: TO247 Drain-source voltage: 650V Drain current: 70A On-state resistance: 39mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |