SCS320AJTLL Rohm Semiconductor
auf Bestellung 955 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 11.63 EUR |
| 25+ | 10.73 EUR |
| 50+ | 9.94 EUR |
| 100+ | 9.23 EUR |
| 250+ | 8.6 EUR |
| 500+ | 8.01 EUR |
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Technische Details SCS320AJTLL Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 20A LPTL, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1000pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: LPTL, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Weitere Produktangebote SCS320AJTLL nach Preis ab 8.17 EUR bis 16.56 EUR
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SCS320AJTLL | Hersteller : ROHM Semiconductor |
 SiC Schottky Diodes SIC SBD 650V 20A 125W TO-263AB (LPTL) |
auf Bestellung 845 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS320AJTLL | Hersteller : Rohm Semiconductor |
Description: DIODE SIL CARBIDE 650V 20A LPTL Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1000pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: LPTL Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
auf Bestellung 984 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS320AJTLL | Hersteller : Rohm Semiconductor |
Description: DIODE SIL CARBIDE 650V 20A LPTL Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1000pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: LPTL Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
Produkt ist nicht verfügbar |