SCS210KNHRTRL ROHM Semiconductor
Hersteller: ROHM Semiconductor
SiC Schottky Diodes 1200V, 10A, SMD, Silicon-carbide (SiC) SBD for Automotive (3-pin package)
SiC Schottky Diodes 1200V, 10A, SMD, Silicon-carbide (SiC) SBD for Automotive (3-pin package)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 10.7 EUR |
| 10+ | 9.17 EUR |
| 100+ | 7.64 EUR |
| 250+ | 7.32 EUR |
| 500+ | 6.74 EUR |
| 1000+ | 6.05 EUR |
| 2000+ | 5.79 EUR |
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Technische Details SCS210KNHRTRL ROHM Semiconductor
Description: 1200V, 10A, SMD, SILICON-CARBIDE, Packaging: Cut Tape (CT), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 530pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: LPDS, Operating Temperature - Junction: 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V, Qualification: AEC-Q101.
Weitere Produktangebote SCS210KNHRTRL nach Preis ab 3.75 EUR bis 9.54 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SCS210KNHRTRL | Hersteller : Rohm Semiconductor |
 Diode Schottky SiC 1.2KV 10A 3-Pin(2+Tab) TO-263 Automotive AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCS210KNHRTRL | Hersteller : Rohm Semiconductor |
Description: 1200V, 10A, SMD, SILICON-CARBIDE Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 530pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| SCS210KNHRTRL | Hersteller : Rohm Semiconductor |
Description: 1200V, 10A, SMD, SILICON-CARBIDE Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 530pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |