SCS210AMC Rohm Semiconductor

Description: DIODE SIL CARB 650V 10A TO220FM, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 365pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220FM, Operating Temperature - Junction: 175°C (Max), Part Status: Not For New Designs, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 600 V, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10, Voltage Coupled to Current - Reverse Leakage @ Vr: 600.