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SCH1337-TL-W

SCH1337-TL-W onsemi

SCH1337.pdf Hersteller: onsemi
Description: MOSFET P-CH 30V 2A SOT563/SCH6
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-563/SCH6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V
auf Bestellung 76489 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2664+0.18 EUR
Mindestbestellmenge: 2664
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Technische Details SCH1337-TL-W onsemi

Description: MOSFET P-CH 30V 2A SOT563/SCH6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: SOT-563/SCH6, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V.

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SCH1337-TL-W SCH1337-TL-W Hersteller : ONSEMI SCH1337-D.PDF Description: ONSEMI - SCH1337-TL-W - MOSFET, P-CH, -30V, -2A, SOT-563-6
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 76489 Stücke:
Lieferzeit 14-21 Tag (e)
SCH1337-TL-W SCH1337-TL-W Hersteller : onsemi SCH1337.pdf Description: MOSFET P-CH 30V 2A SOT563/SCH6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-563/SCH6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V
Produkt ist nicht verfügbar
SCH1337-TL-W SCH1337-TL-W Hersteller : onsemi SCH1337_D-775520.pdf MOSFET PCH 4V Power MOSFET
Produkt ist nicht verfügbar