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S80KS5123GABHI023 Infineon Technologies


interface_hyperram_self-refresh_dram-datasheet-v01_00-en.pdf Hersteller: Infineon Technologies
256Mb Self-Refresh Dynamic RAM
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Technische Details S80KS5123GABHI023 Infineon Technologies

Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA, Packaging: Tape & Reel (TR), Package / Case: 24-VBGA, Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 2V, Technology: PSRAM (Pseudo SRAM), Clock Frequency: 200 MHz, Memory Format: PSRAM, Supplier Device Package: 24-FBGA (6x8), Write Cycle Time - Word, Page: 35ns, Memory Interface: SPI - Octal I/O, Access Time: 35 ns, Memory Organization: 64M x 8, DigiKey Programmable: Not Verified.

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S80KS5123GABHI023 Hersteller : Infineon Technologies interface_hyperram_self-refresh_dram-datasheet-v01_00-en.pdf 256Mb Self-Refresh Dynamic RAM
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S80KS5123GABHI023 S80KS5123GABHI023 Hersteller : Infineon Technologies Infineon-S80KS5123_1.8_V_512-Mbit_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81228a00795 Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S80KS5123GABHI023 S80KS5123GABHI023 Hersteller : Infineon Technologies Infineon_S80KS5123_1_8_V_512_Mbit_Octal_xSPI_Inter-3363663.pdf DRAM HyperRAM
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