S4D10120F SMC DIODE SOLUTIONS


S4D10120A%20S4D10120E%20S4D10120H%20S4D10120F%20N2321%20REV.G.pdf Hersteller: SMC DIODE SOLUTIONS
S4D10120F-SMC THT Schottky diodes
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Technische Details S4D10120F SMC DIODE SOLUTIONS

Description: DIODE SIC 1.2KV 10A ITO220AC, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 772pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: ITO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.

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S4D10120F S4D10120F Hersteller : SMC Diode Solutions S4D10120A%20S4D10120E%20S4D10120H%20S4D10120F%20N2321%20REV.G.pdf Description: DIODE SIC 1.2KV 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 772pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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