S3D10065E

S3D10065E SMC Diode Solutions


S3D10065A%20S3D10065F%20S3D10065E%20S3D10065G%20S3D10065I%20S3D10065D1%20N2289%20REV.A.pdf Hersteller: SMC Diode Solutions
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 621pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+3.05 EUR
Mindestbestellmenge: 2500
Produktrezensionen
Produktbewertung abgeben

Technische Details S3D10065E SMC Diode Solutions

Description: DIODE SIL CARBIDE 650V 10A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 621pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: DPAK, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.

Weitere Produktangebote S3D10065E nach Preis ab 3.05 EUR bis 5.56 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
S3D10065E S3D10065E Hersteller : SMC Diode Solutions S3D10065A%20S3D10065F%20S3D10065E%20S3D10065G%20S3D10065I%20S3D10065D1%20N2289%20REV.A.pdf Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 621pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.56 EUR
10+ 4.99 EUR
100+ 4.09 EUR
500+ 3.48 EUR
1000+ 3.05 EUR
Mindestbestellmenge: 4