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S29GL512S11TFB023

S29GL512S11TFB023 Infineon Technologies


_mbit_32_mbyte_128_mbit_16_mbyte_3.0_v_gl-s_flash_memory.pdf Hersteller: Infineon Technologies
NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 110ns Automotive 56-Pin TSOP T/R
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Technische Details S29GL512S11TFB023 Infineon Technologies

Description: PNOR, Packaging: Tape & Reel (TR), Package / Case: 56-TFSOP (0.724", 18.40mm Width), Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 105°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR (SLC), Memory Format: FLASH, Supplier Device Package: 56-TSOP, Grade: Automotive, Write Cycle Time - Word, Page: 60ns, Memory Interface: CFI, Access Time: 110 ns, Memory Organization: 64M x 8, Qualification: AEC-Q100.

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S29GL512S11TFB023 Hersteller : Infineon Technologies Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: PNOR
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 64M x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar