S15JLWHRVG Taiwan Semiconductor Corporation
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Description: DIODE GEN PURP 600V 1.5A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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Technische Details S15JLWHRVG Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A SOD123W, Packaging: Tape & Reel (TR), Package / Case: SOD-123W, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 10pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.5A, Supplier Device Package: SOD-123W, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V.
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S15JLWHRVG | Hersteller : Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
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S15JLWHRVG | Hersteller : Taiwan Semiconductor |
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