RV4E031RPHZGTCR1 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 3.1A DFN1616-6W
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-6W
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 3.1A DFN1616-6W
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-6W
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5852 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.28 EUR |
16+ | 1.11 EUR |
100+ | 0.77 EUR |
500+ | 0.64 EUR |
1000+ | 0.55 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RV4E031RPHZGTCR1 Rohm Semiconductor
Description: MOSFET P-CH 30V 3.1A DFN1616-6W, Packaging: Tape & Reel (TR), Package / Case: 6-PowerWFDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: DFN1616-6W, Grade: Automotive, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote RV4E031RPHZGTCR1 nach Preis ab 0.71 EUR bis 1.32 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
RV4E031RPHZGTCR1 | Hersteller : ROHM Semiconductor | MOSFET AECQ |
auf Bestellung 2974 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||
RV4E031RPHZGTCR1 | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 3.1A DFN1616-6W Packaging: Tape & Reel (TR) Package / Case: 6-PowerWFDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: DFN1616-6W Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |