![RV2C010UNT2L RV2C010UNT2L](https://static6.arrow.com/aropdfconversion/arrowimages/883edbb103a939cd6508ab8c90fa736acda12219/vml0806.jpg)
RV2C010UNT2L Rohm Semiconductor
auf Bestellung 7580 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
626+ | 0.25 EUR |
649+ | 0.23 EUR |
1000+ | 0.21 EUR |
2500+ | 0.2 EUR |
5000+ | 0.19 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RV2C010UNT2L Rohm Semiconductor
Description: MOSFET N-CH 20V 1A DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 4.5V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: VML1006, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V.
Weitere Produktangebote RV2C010UNT2L nach Preis ab 0.13 EUR bis 0.68 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
RV2C010UNT2L | Hersteller : Rohm Semiconductor |
![]() |
auf Bestellung 15500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
RV2C010UNT2L | Hersteller : Rohm Semiconductor |
![]() |
auf Bestellung 663 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
RV2C010UNT2L | Hersteller : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VML1006 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
auf Bestellung 6143 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
RV2C010UNT2L | Hersteller : ROHM Semiconductor |
![]() |
auf Bestellung 183869 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
RV2C010UNT2L | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3 Mounting: SMD Kind of package: reel; tape Case: DFN1006-3 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 2A Polarisation: unipolar Power dissipation: 0.4W Type of transistor: N-MOSFET On-state resistance: 1.05Ω Drain current: 1A Drain-source voltage: 20V Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
![]() |
RV2C010UNT2L | Hersteller : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VML1006 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
Produkt ist nicht verfügbar |
|||||||||||||||||
RV2C010UNT2L | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3 Mounting: SMD Kind of package: reel; tape Case: DFN1006-3 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 2A Polarisation: unipolar Power dissipation: 0.4W Type of transistor: N-MOSFET On-state resistance: 1.05Ω Drain current: 1A Drain-source voltage: 20V |
Produkt ist nicht verfügbar |