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RUF025N02TL Rohm Semiconductor
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Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.37 EUR |
6000+ | 0.35 EUR |
9000+ | 0.32 EUR |
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Technische Details RUF025N02TL Rohm Semiconductor
Description: MOSFET N-CH 20V 2.5A TUMT3, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: TUMT3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V.
Weitere Produktangebote RUF025N02TL nach Preis ab 0.34 EUR bis 0.98 EUR
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RUF025N02TL | Hersteller : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TUMT3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V |
auf Bestellung 19828 Stücke: Lieferzeit 10-14 Tag (e) |
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RUF025N02TL | Hersteller : ROHM Semiconductor |
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auf Bestellung 20206 Stücke: Lieferzeit 10-14 Tag (e) |
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RUF025N02TL |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RUF025N02TL | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3 Polarisation: unipolar Power dissipation: 0.8W Kind of package: reel; tape Gate charge: 5nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 5A Mounting: SMD Case: TUMT3 Drain-source voltage: 20V Drain current: 2.5A On-state resistance: 0.16Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RUF025N02TL | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3 Polarisation: unipolar Power dissipation: 0.8W Kind of package: reel; tape Gate charge: 5nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 5A Mounting: SMD Case: TUMT3 Drain-source voltage: 20V Drain current: 2.5A On-state resistance: 0.16Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |