RTR040N03HZGTL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.31 EUR |
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Technische Details RTR040N03HZGTL Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TSMT3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote RTR040N03HZGTL nach Preis ab 0.38 EUR bis 1.07 EUR
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RTR040N03HZGTL | Hersteller : ROHM Semiconductor |
MOSFET Nch 30V 4A Small Signal MOSFET for Automotive. RTR040N03HZG is a low on-resistance MOSFET for automotive, suitable for swithing applications. |
auf Bestellung 2200 Stücke: Lieferzeit 10-14 Tag (e) |
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RTR040N03HZGTL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 4A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 14559 Stücke: Lieferzeit 10-14 Tag (e) |
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RTR040N03HZGTL | Hersteller : ROHM |
Description: ROHM - RTR040N03HZGTL - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.034 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: TSMT Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.034ohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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RTR040N03HZGTL | Hersteller : ROHM |
Description: ROHM - RTR040N03HZGTL - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.034 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES Verlustleistung: 1W Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.034ohm rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 4075 Stücke: Lieferzeit 14-21 Tag (e) |
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| RTR040N03HZGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 1W; TSMT3 Mounting: SMD On-state resistance: 66mΩ Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.9nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 16A Case: TSMT3 Drain-source voltage: 30V Drain current: 4A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RTR040N03HZGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 1W; TSMT3 Mounting: SMD On-state resistance: 66mΩ Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.9nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 16A Case: TSMT3 Drain-source voltage: 30V Drain current: 4A |
Produkt ist nicht verfügbar |