RTR020N05HZGTL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 45V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.37 EUR |
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Technische Details RTR020N05HZGTL Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TSMT3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote RTR020N05HZGTL nach Preis ab 0.32 EUR bis 1.53 EUR
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RTR020N05HZGTL | Hersteller : ROHM Semiconductor |
MOSFETs Nch 45V 2A Small Signal MOSFET. RTR020N05HZG is the high reliability Automotive MOSFET, suitable for switching application. |
auf Bestellung 5122 Stücke: Lieferzeit 10-14 Tag (e) |
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RTR020N05HZGTL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 45V 2A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 5375 Stücke: Lieferzeit 10-14 Tag (e) |
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RTR020N05HZGTL | Hersteller : ROHM |
Description: ROHM - RTR020N05HZGTL - Leistungs-MOSFET, n-Kanal, 45 V, 2 A, 0.13 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 45V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: TSMT Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.13ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 377 Stücke: Lieferzeit 14-21 Tag (e) |
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RTR020N05HZGTL | Hersteller : ROHM |
Description: ROHM - RTR020N05HZGTL - Leistungs-MOSFET, n-Kanal, 45 V, 2 A, 0.13 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES Verlustleistung: 1 Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.13 rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 2005 Stücke: Lieferzeit 14-21 Tag (e) |
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| RTR020N05HZGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 2A; Idm: 8A; 1W; TSMT3 Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 8A Case: TSMT3 Drain-source voltage: 45V Drain current: 2A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.9nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RTR020N05HZGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 2A; Idm: 8A; 1W; TSMT3 Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 8A Case: TSMT3 Drain-source voltage: 45V Drain current: 2A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.9nC |
Produkt ist nicht verfügbar |